Speaker: C Katerji (pdf slides,1.2 Mb)
With J Cuevas B Sánchez-Rey and A Alvarez.

Abstract: There is experimental evidence that the structural deffects in crystals like silicon move when it is radiated with ions. A possible explanation is that ions induce moving breathers which make the deffects to move. We propose a model with vacancy deffects and observe numerically their interaction with moving breathers. The three possibilities appear, i.e, the vacancy moves forward, backwards or remains in its place depending on the parameters of the system, the energy and the phase of the moving breathers. The latter can be reflected, transmitted or trapped but without an exact correlation with the vacancy behaviour. The dependency on the moving breather energy is related with the convexity of the coupling potential.